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K4F661612E Datasheet, RAM, Samsung semiconductor

K4F661612E Datasheet, RAM, Samsung semiconductor

K4F661612E

datasheet Download (Size : 445.72KB)

K4F661612E Datasheet
K4F661612E

datasheet Download (Size : 445.72KB)

K4F661612E Datasheet

K4F661612E Features and benefits

K4F661612E Features and benefits

of this family. All of this family have CAS-before-RAS refresh, RAS -only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-v.

K4F661612E Description

K4F661612E Description

This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low po.

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TAGS

K4F661612E
K4F641612E
K4F661612E
16bit
CMOS
Dynamic
RAM
Samsung semiconductor

Manufacturer


Samsung semiconductor

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